vishay siliconix sip4280 document number: 73476 s-61690?rev. d, 04-sep-06 www.vishay.com 1 slew rate controlled load switch features ? 1.8 v to 5.5 v input voltage range ? very low r ds(on) , typically 80 m (5 v) ? slew rate limited turn-on time options - sip4280-1: 1 ms - sip4280-3: 100 s ? fast shutdown load discharge option ? low quiescent current ? 4 kv esd rating ? 6 pin sot23 package applications ? cellular telephones ? digital still cameras ? personal digital assistants (pda) ? hot swap supplies ? notebook computers ? personal communication devices description the sip4280 is a p-channel mosfet power switch designed for high-side load switching applications. the output pass transistor is a p-channel mosfet transistor with typically 80 m r ds(on) . the sip4280 is available in two different versions of turn-on times. the sip4280-1 version has a slew rate limited turn-on time typically of 1 ms. the sip4280-3 version has a slew rate limited turn-on time typically of 100 s and additionally offers a shutdown load discharge circuit to rapidly turn off a load circuit when the switch is dis- abled. both sip4280 load switch versions operate with an input voltage ranging from 1.8 v to 5.5 v, making them ideal for both 3 v and 5 v applications. the sip4280 also features an under-voltage lock out which turns the switch off when an input undervoltage condition exists. input logic levels are ttl and 2.5 v to 5.0 v cmos compatible. the quiescent supply current is very low, typically 2.5 a. in shutdown mode, the sup- ply current decreases to less than 1.0 a. the sip4280 is available in a 6 pin sot23 package and is specified over - 40 c to 85 c temperature range . typical application circuit vin c in 1 f gnd on vin on/off gnd out vout gnd c out 0.1 f
www.vishay.com 2 document number: 73476 s-61690?rev. d, 04-sep-06 vishay siliconix sip4280 notes: a. device mounted with all leads soldered or welded to pc board. b. derate 5.5 mw/c above t a = 70 c. stresses beyond those listed under "absol ute maximum ratings" may cause permanent dam age to the device. these are stress rating s only, and functional operation of the device at t hese or any other conditions beyond those indi cated in the operational sections of t he specifications is not implied. exposure to absolute maximum rating/condi tions for extended periods may affect device reliability. notes: a. the algebraic convention whereby the most negative value is a minimum and the most positive a maximum. b. typical values are for design aid only, not guaranteed nor subject to production testing. c. part requires minimum start-up of v in 2.0 to ensure operation down to 1.8 v. d. for v in 2.7 v see typical on/off threshold curve. absolute maximum ratings parameter symbol steady state unit supply input voltage v in - 0.3 to 6 v enable input voltage v on - 0.3 to 6 output voltage v out - 0.3 to v in + 0.3 maximum switch current i max 2.3 a maximum pulsed current v in 2.5 i dm 6 v in < 2.5 i dm 3 junction temperature t j - 40 to 150 c thermal resistance sot23-6l ja a 180 c/w power dissipation sot23-6l b p d 440 mw recommended operating range all voltages referenced to gnd = 0 v parameter symbol steady state unit v in 1.8 to 5.5 v operating temperature range - 40 to 85 c specifications parameter symbol test conditions unless specified v in = 5 v, t a = - 40 to + 85 c limits min a typ b max a unit sip4280 all versions operating voltage c v in 1.8 - 5.5 v undervoltage lockout v uvlo v in falling 1.0 1.4 1.8 undervoltage lockout hysteresis v uvlo(hyh) - 250 - mv quiescent current i q on/off = active - 2.5 4 a off supply current i q(off) on/off = inactive, out = open - 0.01 1 off switch current i sd(off) on/off = inactive, v out = 0 -0.011 on-resistance r ds(on) v in = 5 v, t a = 25 c - 80 120 m v in = 4.2 v, t a = 25 c - 85 130 v in = 3 v, t a = 25 c - 100 150 v in = 1.8 v, t a = 25 c - 160 250 on-resistance temp-coefficient tc rds - 2800 - ppm/c on/off input low voltage d v il v in = 2.7 v to 5.5 v --0.8 v on/off input high voltage v ih v in = 2.7 v to 4.2 v 2- - v in > 4.2 v to 5.5 v 2.4 - - on/off input leakage i sink v on/off = 5.5 v --1a sip4280-1 version output turn-on delay time t d(on) v in = 5 v, r load = 10 , t a = 25 c -2040 s output turn-on rise time t on v in = 5 v, r load = 10 , t a = 25 c - 1000 1500 output turn-off delay time t d(off) v in = 5 v, r load = 10 , t a = 25 c -410 sip4280-3 version output turn-on delay time t d(on) v in = 5 v, r load = 10 , t a = 25 c -2040 s output turn-on rise time t on v in = 5 v, r load = 10 , t a = 25 c - 100 150 output turn-off delay time t d(off) v in = 5 v, r load = 10 , t a = 25 c -410 output pull-down resistance r pd on/off = inactive, t a = 25 c - 150 250
document number: 73476 s-61690?rev. d, 04-sep-06 www.vishay.com 3 vishay siliconix sip4280 pin configuration pin description pin number sot23-6 pin name symbol 4, 6 vin this pin is the p-channel mosfet source connection 3 on/off logic high enables the ic; logic low disables the ic and reduces the ic and reduces the quiescent current to 2.5 a 2, 5 gnd ground connection 1 out this pin is the p-channel mosfet drain connection selection guide part number slew rate (typ) active pull down enable sip4280-1-t1-e3 1 ms no active high sip4280-3-t1-e3 100 s yes active high ordering information part number marking temperature range package sip4280dt-1-t1-e3 l1xxx - 40 c to 85 c sot23-6l SIP4280DT-3-T1-E3 l3xxx sot23-6l 1 top v ie w out v i n g n d g n d v i n 2 3 6 5 4 sot23-6 o n /off o
www.vishay.com 4 document number: 73476 s-61690?rev. d, 04-sep-06 vishay siliconix sip4280 typical characteristics internally regulated, 25 c unless noted quiescent current vs. temperature r ds(on) vs. input voltage on/off threhold vs. input voltage 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 - 40 temperat u re (c) - 25 0 25 50 75 8 5 v = 5 v v i n = 3 v i q ( a) 50 70 90 110 130 150 170 190 210 230 250 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 v i n ( v ) 2 a 100 ma 1 a 500 ma r ) n o ( s d m ( ) 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 2.0 2.2 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 v i n ( v ) v il ) v ( d l o h s e r h t f f o / n o v ih quiescent current vs. input voltage r ds(on) vs. temperature off switch current vs. temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0123456 v i n ( v ) t n e r r u c t n e c s e i u q ( a) 60 70 8 0 90 100 110 120 130 140 temperat u re (c) r ) n o ( s d m ( ) - 40 - 25 0 25 50 75 8 5 v = 5 v v = 3 v 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 temperat u re (c) w s f f o i - 40 - 25 0 25 50 75 8 5 100 ( a)
document number: 73476 s-61690?rev. d, 04-sep-06 www.vishay.com 5 vishay siliconix sip4280 typical waveforms sip4280-1 turn-on (v in = 3 v, r load = 6 ) sip4280-1 turn-on (v in = 5 v, r load = 10 ) o n /off (5 v /di v .) v out (2 v /di v .) i i n (200 ma/di v .) time (500 s/di v ) o n /off (5 v /di v .) v out (2 v /di v .) i i n (200 ma/di v .) time (500 s/di v ) sip4280-1 turn-off (v in = 3 v, r load = 6 ) sip4280-1 turn-off (v in = 5 v, r load = 10 ) o n /off (5 v /di v .) v out (2 v /di v .) i i n (200 ma/di v .) time (5 s/di v ) o n /off (5 v /di v .) v out (2 v /di v .) i i n (200 ma/di v .) time (5 s/di v )
www.vishay.com 6 document number: 73476 s-61690?rev. d, 04-sep-06 vishay siliconix sip4280 typical waveforms sip4280-3 turn-on (v in = 3 v, r load = 6 ) sip4280-3 turn-on (v in = 5 v, r load = 10 ) o n /off (5 v /di v .) v out (2 v /di v .) i i n (200 ma/di v .) time (50 s/di v ) o n /off (5 v /di v .) v out (2 v /di v .) i i n (200 ma/di v .) time (50 s/di v ) sip4280-3 turn-off (v in = 3 v, r load = 6 ) sip4280-3 turn-off (v in = 5 v, r load = 10 ) o n /off (5 v /di v .) v out (2 v /di v .) i i n (200 ma/di v .) time (5 s/di v ) o n /off (5 v /di v .) v out (2 v /di v .) i i n (200 ma/di v .) time (5 s/di v )
vishay siliconix sip4280 document number: 73476 s-61690?rev. d, 04-sep-06 www.vishay.com 7 block diagram detailed description the sip4280 is a p-channel mosfet power switches designed for high-side slew rate controlled load switching applications. once turned on, the slew- rate control circuitry is ac tivated and current is ramped in a linear fashion until it reaches the level required for the output load condition. this is accomplished by first elevating the gate voltage of the mosfet up to its threshold voltage and then by linearly increasing the gate voltage until the mosfet becomes fully enhanced. at this point, the gate voltage is then quickly increased to the full input voltage to reduce r ds(on) of the mosfet switch and minimize any associated power losses. the sip4280-1 version has a modest 1 ms turn on slew rate feature, which significantly reduces in-rush current at turned on time and permits the load switch to be implemented with a small input capacitor, or no input capacitor at all, saving cost and space. in addi- tion to a 100 s minimized slew rate, the sip4280-3 features a shutdown output discharge circuit which is activated at shutdown (when the part is disabled through the on/off pin) and discharges the output pin through a small internal resistor hence, turning off the load. in instances where the input voltage falls below 1.4 v (typically) the under voltage lock-out circuitry protects the mosfet switch from entering the saturation region or operation by shutting down the chip. sip42 8 0 f u nctional block diagramm sip42 8 0?3 v ersion only
www.vishay.com 8 document number: 73476 s-61690?rev. d, 04-sep-06 vishay siliconix sip4280 application information input capacitor while a bypass capacitor on the input is not required, a 1 f or larger capacitor for cin is recommended in almost all applications. the bypass capacitor should be placed as physically close as possible to the sip4280 to be effective in minimizing transients on the input. ceramic capacitors are recommended over tantalum because of their ability to wit hstand input current surges from low impedance sources such as batteries in porta- ble devices. output capacitor a 0.1 f capacitor or larger across v out and gnd is recommended to insure proper slew operation. c out may be increased without limit to accommodate any load transient condition with only minimal affect on the sip4280 turn on slew rate time. there are no esr or capacitor type requirement. enable the on/off pin is compat ible with both ttl and cmos logic voltage levels . reverse voltage conditions and protection the p-channel mosfet pass transistor has an intrin- sic diode that is reversed biased when the input voltage is greater than the output voltage. should v out exceed v in , this intrinsic diode will become forward biased and allow excessive current to flow into the ic thru the v out pin and potentially damage the ic device. therefore extreme care should be taken to prevent v out from exceeding v in . in conditions where v out exceeds v in a schottky diode in parallel with the internal intrinsic diode is recom- mended to protect the sip4280. vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon tech- nology and package reliability represent a com posite of all qualified locations. for related documents such as package/tape dra wings, part marking, and reliability data, see http://www.vishay.com/ppg?73476
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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